POWER MOSFET

专利名称：POWER MOSFET发明人：Yi-Chi Chang申请号：US15657227申请日：20170724

公开号：US20170323800A1公开日：20171109

专利附图：

摘要：A power MOSFET includes a substrate, a dielectric layer, solder balls, first andsecond patterned-metal layers. The substrate includes an active surface, a back surface, asource region and a gate region on the active surface, and a drain region on the backsurface. The first patterned-metal layer disposed on the active surface includes a source

electrode, a gate electrode, a drain electrode and a connecting trace. The source andgate electrodes electrically connect the source and gate regions. The connecting tracelocated at an edge of the substrate electrically connects the drain electrode. Thedielectric layer disposed on the active surface exposes the first patterned-metal layer.The second patterned-metal layer includes UBM layers covering the source, gate anddrain electrodes and a connecting metal layer covering the connecting trace andextending to the edge to electrically connect the drain region. The solder balls aredisposed on the UBM layers.

申请人：Excelliance MOS Corporation

地址：Hsinchu County TW

国籍：TW

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